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FQPF16N25N-Channel 250 V 9.5A (Tc) 50W (Tc) Through Hole TO-220F-3

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ABRmicro #.ABR2045-FQPF16-1038487
MPN #.FQPF16N25
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In Stock: 55879
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Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C9.5A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)35 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1200 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation50W (Tc)
RDS(on) Drain-to-Source On Resistance230mOhm @ 4.75A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQPF16N25 is an N-Channel MOSFET manufactured by Fairchild Semiconductor, designed for high-efficiency power management. It features a maximum drain-source voltage of 250 V and a continuous drain current up to 9.5 Amps under specific conditions. This transistor is capable of handling a power dissipation of 50 Watts in a TO-220F-3 package, which is a standard through-hole configuration facilitating easier mounting on circuit boards. It also has a gate-source voltage rating of ±30 V and a gate threshold at 10 V, with an input capacitance of 1200 pF when measured at 25 V. The device's design ensures robust performance under varied operating conditions, making it suitable for a wide range of electronic power applications.
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