FQPF12N60N-Channel 600 V 5.8A (Tc) 55W (Tc) Through Hole TO-220F-3
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ABRmicro #.ABR2045-FQPF12-1007454
ManufacturerFairchild Semiconductor
MPN #.FQPF12N60
Estimated Lead Time-
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Datasheet
FQPF12N60(PDF)
FQPF12N60(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C5.8A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)54 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1900 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation55W (Tc)
RDS(on) Drain-to-Source On Resistance700mOhm @ 2.9A, 10V
Package Type (Mfr.)TO-220F-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQPF12N60 is an N-Channel MOSFET manufactured by Fairchild Semiconductor, designed to handle a maximum voltage of 600V and a current of 5.8A. It features a TO-220F-3 package suitable for through-hole mounting, which provides efficient thermal performance with a maximum power dissipation of 55W. The component exhibits an on-resistance of 700 milliohms at a current of 2.9A and a gate-source voltage of 10V. It has a gate threshold voltage of ±30V, making it suitable for high-voltage applications. This MOSFET allows for controlled switching with a gate-source voltage requirement of 10V.
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