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FQP9N08LN-Channel 80 V 9.3A (Tc) 40W (Tc) Through Hole TO-220-3

1:$0.2070

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ABRmicro #.ABR2045-FQP9N0-923474
ManufacturerFairchild Semiconductor
MPN #.FQP9N08L
Estimated Lead Time-
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DatasheetDatasheetFQP9N08L(PDF)
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In Stock: 3618
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
* Quantity
Unit Price$ 0.2070
Ext. Price$ 0.2070
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Price Gradients
Qty.Unit PriceExt. Price
1025$0.2070$212.1750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C9.3A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6.1 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)280 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation40W (Tc)
RDS(on) Drain-to-Source On Resistance210mOhm @ 4.65A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
FQP9N08L
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)