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FQP44N08N-Channel 80 V 44A (Tc) 127W (Tc) Through Hole TO-220-3

1:$0.5020

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ABRmicro #.ABR2045-FQP44N-929890
MPN #.FQP44N08
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DatasheetDatasheetFQP44N08(PDF)
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In Stock: 802
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Unit Price$ 0.5020
Ext. Price$ 0.5020
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
452$0.5020$226.6780
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C44A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)50 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1430 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation127W (Tc)
RDS(on) Drain-to-Source On Resistance34mOhm @ 22A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQP44N08 is a high-performance N-channel MOSFET manufactured by Fairchild Semiconductor. It is designed for high-power applications, featuring a maximum drain-source voltage of 80V and a continuous drain current of up to 44A when the case temperature is properly managed. This component is encapsulated in a TO-220-3 package, which is suited for through-hole mounting. It boasts a low on-resistance of 34 milliohms at a gate voltage of 10V and a current of 22A, allowing for efficient current flow with reduced power loss. The MOSFET can handle a maximum power dissipation of 127 watts when adequately cooled. With a gate-to-source voltage rating of ±25V, it offers robust performance in a variety of electronic circuits.
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