FQP19N10LN-Channel 100 V 19A (Tc) 75W (Tc) Through Hole TO-220-3
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ABRmicro #.ABR2045-FQP19N-980817
ManufacturerFairchild Semiconductor
MPN #.FQP19N10L
Estimated Lead Time-
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Datasheet
FQP19N10L(PDF)
FQP19N10L(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C19A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)18 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)870 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation75W (Tc)
RDS(on) Drain-to-Source On Resistance100mOhm @ 9.5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQP19N10L is a N-channel MOSFET manufactured by Fairchild Semiconductor, designed to handle up to 100 volts and 19 amperes when properly mounted. Housed in a TO-220-3 package suitable for through-hole mounting, this component offers a power dissipation capacity of 75 watts under specific thermal conditions (Tc). The MOSFET exhibits a maximum on-state resistance of 100 milliohms when conducting a current of 9.5A at a gate-source voltage of 10V, ensuring efficient conductivity. Its structural design allows for reliable performance within its specified voltage and current ratings, making it suitable for various electronic applications that require effective power management.
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