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FQP18N50V2N-Channel 500 V 18A (Tc) 208W (Tc) Through Hole TO-220-3
1:$3.3150
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ABRmicro #.ABR2045-FQP18N-952377
ManufacturerFairchild Semiconductor
MPN #.FQP18N50V2
Estimated Lead Time-
SampleGet Free Sample
DatasheetFQP18N50V2(PDF)
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In Stock: 372
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Unit Price$ 3.3150
Ext. Price$ 3.3150
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* Prices exclude tax, and all prices are in USD.
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Qty.Unit PriceExt. Price
69$3.3150$228.7350
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C18A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)55 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3290 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation208W (Tc)
RDS(on) Drain-to-Source On Resistance265mOhm @ 9A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQP18N50V2 is a power MOSFET developed by Fairchild Semiconductor, designed with n-channel architecture to handle high voltage and current requirements. It supports a drain-source voltage of up to 500V and can carry a continuous drain current of 18A at a case temperature. The device is capable of dissipating 208W of power under specified conditions and is housed in a robust TO-220-3 through-hole package, suitable for heat sink mounting. Performance characteristics include a drain-source on-state resistance of 265mOhm at a drain current of 9A and a gate-source voltage of 10V. It has a threshold voltage of 5V with a gate current of 250µA, making it suitable for a wide range of electrical and electronic applications requiring efficient switching capabilities.
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