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FQP11N40N-Channel 400 V 11.4A (Tc) 147W (Tc) Through Hole TO-220-3

1:$0.6820

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ABRmicro #.ABR2045-FQP11N-921590
MPN #.FQP11N40
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DatasheetDatasheetFQP11N40(PDF)
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In Stock: 1343
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.6820
Ext. Price$ 0.6820
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Price Gradients
Qty.Unit PriceExt. Price
333$0.6820$227.1480
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C11.4A (Tc)
Drain-to-Source Voltage (VDS)400 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)35 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1400 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation147W (Tc)
RDS(on) Drain-to-Source On Resistance480mOhm @ 5.7A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQP11N40 is an N-Channel MOSFET manufactured by Fairchild Semiconductor, designed to handle a voltage of up to 400 V and a continuous current of 11.4 A under certain conditions. It comes in a TO-220-3 through-hole package, which allows for easier mounting and heat dissipation. This part can manage a power dissipation of 147 W at its maximum case temperature. It features gate-source thresholds of 10 V and 5 V at 250 µA, and can tolerate gate-source voltages up to ±30 V. This MOSFET is used in various electronic devices for efficient power handling and switching purposes.
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