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FQI9N50TUN-Channel 500 V 9A (Tc) 3.13W (Ta), 147W (Tc) Through Hole TO-262 (I2PAK)

1:$0.7440

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ABRmicro #.ABR2045-FQI9N5-968916
ManufacturerFairchild Semiconductor
MPN #.FQI9N50TU
Estimated Lead Time-
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DatasheetDatasheetFQI9N50TU(PDF)
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In Stock: 529
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7440
Ext. Price$ 0.7440
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
307$0.7440$228.3310
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C9A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)36 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1450 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.13W (Ta), 147W (Tc)
RDS(on) Drain-to-Source On Resistance730mOhm @ 4.5A, 10V
Package Type (Mfr.)TO-262 (I2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
FQI9N50TU
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQI9N50TU is an N-Channel MOSFET manufactured by Fairchild Semiconductor, designed for high-voltage and high-current applications. It features a voltage rating of 500V and can handle a current of 9A. The power dissipation is rated at 3.13W in free air (Ta) and 147W when mounted on a heatsink (Tc), indicating its capability to operate efficiently under varying thermal conditions. Encased in a TO-262 (I2PAK) through-hole package, it offers convenience for PCB mounting. The MOSFET exhibits a gate threshold voltage of 5V at a 250µA current, with an input capacitance of 1450 pF at 25V. Furthermore, the MOSFET demonstrates an on-state resistance of 730mOhm when conducting 4.5A at 10V, which highlights its performance efficiency in terms of low conductive losses.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.