FQI5P10TUP-Channel 100 V 4.5A (Tc) 3.75W (Ta), 40W (Tc) Through Hole TO-262 (I2PAK)
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ABRmicro #.ABR2045-FQI5P1-1037553
ManufacturerFairchild Semiconductor
MPN #.FQI5P10TU
Estimated Lead Time-
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Datasheet
FQI5P10TU(PDF)
FQI5P10TU(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C4.5A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)8.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)250 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.75W (Ta), 40W (Tc)
RDS(on) Drain-to-Source On Resistance1.05Ohm @ 2.25A, 10V
Package Type (Mfr.)TO-262 (I2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQI5P10TU is a P-channel MOSFET manufactured by Fairchild Semiconductor, designed for efficient power management. It operates at a maximum voltage of 100 V and supports a continuous current of up to 4.5 A when properly cooled. The component is housed in a TO-262 (I2PAK) through-hole package, allowing for straightforward integration onto circuit boards. It features an on-resistance of 1.05 ohms at a current of 2.25 A and a gate-source voltage of 10 V. The device delivers a power dissipation capability of 3.75 W when used without additional heatsinking (Ta) and up to 40 W with an appropriate heatsink (Tc), making it suitable for use in moderate power applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.