FQI3N30TUN-Channel 300 V 3.2A (Tc) 3.13W (Ta), 55W (Tc) Through Hole TO-262 (I2PAK)
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ABRmicro #.ABR2045-FQI3N3-1003223
ManufacturerFairchild Semiconductor
MPN #.FQI3N30TU
Estimated Lead Time-
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Datasheet
FQI3N30TU(PDF)
FQI3N30TU(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C3.2A (Tc)
Drain-to-Source Voltage (VDS)300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)230 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.13W (Ta), 55W (Tc)
RDS(on) Drain-to-Source On Resistance2.2Ohm @ 1.6A, 10V
Package Type (Mfr.)TO-262 (I2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQI3N30TU is a discrete N-Channel MOSFET manufactured by Fairchild Semiconductor, designed to handle up to 300 volts and 3.2 amperes when appropriately mounted on a heatsink. Encased in a TO-262 (I2PAK) package, this transistor offers efficient power dissipation capabilities of up to 55 watts when in a suitable thermal environment, and 3.13 watts when operating with natural convection. Its input capacitance is specified at 230 pF with a gate charge of 7 nanocoulombs, both measured at certain voltage conditions, indicating decent switching characteristics. Additionally, it features an on-resistance of 2.2 ohms, which is measured under specific test conditions of 1.6 amperes and 10 volts, providing effective conduction performance for various electrical circuits.
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