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FQH18N50V2N-Channel 500 V 20A (Tc) 277W (Tc) Through Hole TO-247

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ABRmicro #.ABR2045-FQH18N-1002261
ManufacturerFairchild Semiconductor
MPN #.FQH18N50V2
Estimated Lead Time-
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DatasheetDatasheetFQH18N50V2(PDF)
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In Stock: 2840
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C20A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)55 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3290 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation277W (Tc)
RDS(on) Drain-to-Source On Resistance265mOhm @ 10A, 10V
Package Type (Mfr.)TO-247
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-247-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
FQH18N50V2
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQH18N50V2 is an N-Channel MOSFET manufactured by Fairchild Semiconductor, designed for efficient power handling with a maximum voltage rating of 500 V and a continuous drain current of 20A when cooled appropriately. This component is housed in a TO-247 package, making it suitable for through-hole mounting. It can dissipate up to 277 watts of power at its case temperature (Tc). It features a gate threshold voltage of 10V and has a total gate charge of 55 nC at 10 V, facilitating high-speed switching.
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