Image is for reference only, the actual product serves as the standard.
FQD630TMN-Channel 200 V 7A (Tc) 2.5W (Ta), 46W (Tc) Surface Mount TO-252 (DPAK)

1:$0.4720

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-FQD630-917401
MPN #.FQD630TM
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFQD630TM(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 6895
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 13, 2024
* Quantity
Unit Price$ 0.4720
Ext. Price$ 0.4720
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
452$0.4720$213.3440
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
BC547TF$0.0210
Bipolar (BJT) Transistor NPN 45 V 100 mA 300MHz 500 mW Through Hole TO-92-3
BC558CTA$0.0210
Bipolar (BJT) Transistor PNP 30 V 100 mA 150MHz 500 mW Through Hole TO-92-3
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92-3
FJY3005R$0.0210
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SOT-523F
FQD2N50TF$0.2640
N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
N-Channel 500 V 5A (Tc) 38W (Tc) Through Hole TO-220F-3
FQPF6N25$0.2420
N-Channel 250 V 4A (Tc) 37W (Tc) Through Hole TO-220F-3
Technical Specifications
SeriesQFET®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)550 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 46W (Tc)
RDS(on) Drain-to-Source On Resistance400mOhm @ 3.5A, 10V
Package Type (Mfr.)TO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)