FQD5N30TFN-Channel 300 V 4.4A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount TO-252 (DPAK)
1:$0.3110
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ABRmicro #.ABR2045-FQD5N3-948994
ManufacturerFairchild Semiconductor
MPN #.FQD5N30TF
Estimated Lead Time-
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Datasheet
FQD5N30TM(PDF)
FQD5N30TM(PDF)
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Packaging
Bulk
Shipping DateNovember 16, 2024
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Unit Price$ 0.3110
Ext. Price$ 0.3110
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Price Gradients
Qty.Unit PriceExt. Price
740$0.3110$230.3710
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
Technical Specifications
SeriesQFET®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C4.4A (Tc)
Drain-to-Source Voltage (VDS)300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)430 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 45W (Tc)
RDS(on) Drain-to-Source On Resistance900mOhm @ 2.2A, 10V
Package Type (Mfr.)TO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQD5N30TF is an N-channel MOSFET produced by Fairchild Semiconductor, designed for efficient power switching. It is capable of handling a maximum voltage of 300 V and a continuous current of 4.4A when mounted on a TC surface. It exhibits a power dissipation of 2.5W when mounted on TA and can handle up to 45W on a TC surface. Housed in a surface mount TO-252, commonly referred to as a DPAK, it offers ease of installation on PCBs. The device features a capacitance of 430 pF at 25 V and provides an on-resistance of 900 milliohms at 2.2A and 10V, while the gate charge is 13 nC at 10 V, making it suitable for switching applications requiring moderate speed and efficiency.
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