FQD2N90TFN-Channel 900 V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount TO-252 (DPAK)
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ABRmicro #.ABR2045-FQD2N9-994748
ManufacturerFairchild Semiconductor
MPN #.FQD2N90TF
Estimated Lead Time-
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Datasheet
FQD2N90TF(PDF)
FQD2N90TF(PDF)
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Shipping DateNovember 16, 2024
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
Technical Specifications
SeriesQFET®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C1.7A (Tc)
Drain-to-Source Voltage (VDS)900 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)500 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 50W (Tc)
RDS(on) Drain-to-Source On Resistance7.2Ohm @ 850mA, 10V
Package Type (Mfr.)TO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQD2N90TF is an N-Channel MOSFET manufactured by Fairchild Semiconductor, designed for high-voltage applications with a maximum drain-source voltage of 900 V. It has a continuous drain current rating of 1.7A when measured at the case temperature and a power dissipation of 50W at the case and 2.5W on the ambient surface mount configuration. The device is encapsulated in a TO-252 (DPAK) package, which is suitable for surface-mount technology. Additionally, this MOSFET requires a gate threshold voltage of 10V and boasts a gate charge of 15 nC at 10 V, indicating its efficiency in switching applications.
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