FQB7N30TMN-Channel 300 V 7A (Tc) 3.13W (Ta), 85W (Tc) Surface Mount TO-263 (D2PAK)
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ABRmicro #.ABR2045-FQB7N3-1048150
ManufacturerFairchild Semiconductor
MPN #.FQB7N30TM
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Datasheet
FQB7N30TM(PDF)
FQB7N30TM(PDF)
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Shipping DateNovember 17, 2024
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
Technical Specifications
SeriesQFET®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C7A (Tc)
Drain-to-Source Voltage (VDS)300 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)17 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)610 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.13W (Ta), 85W (Tc)
RDS(on) Drain-to-Source On Resistance700mOhm @ 3.5A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQB7N30TM is a power MOSFET from Fairchild Semiconductor, designed with an N-Channel configuration. It operates at a maximum voltage of 300 V and can handle currents up to 7A (when measured at the case temperature, Tc). This component is capable of dissipating 3.13W of power at ambient temperature (Ta) and up to 85W at the case temperature, making it suitable for various power regulation tasks. Encased in a TO-263 (D2PAK) surface mount package, it features a capacitance of 610 pF at 25 V and a threshold voltage of 5V at a current of 250µA. As a metal-oxide semiconductor field-effect transistor (MOSFET), it offers reliable switching characteristics, ideally suited for use in compact and thermally challenging environments.
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