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FQB6N60TMN-Channel 600 V 6.2A (Tc) 3.13W (Ta), 130W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-FQB6N6-944915
ManufacturerFairchild Semiconductor
MPN #.FQB6N60TM
Estimated Lead Time-
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DatasheetDatasheetFQB6N60TM(PDF)
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In Stock: 13386
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Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C6.2A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)25 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1000 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.13W (Ta), 130W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 3.1A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
FQB6N60TM
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQB6N60TM, manufactured by Fairchild Semiconductor, is a surface mount N-Channel MOSFET housed in a TO-263 (D2PAK) package. It is designed to handle a maximum voltage of 600 V and a continuous drain current of up to 6.2 A when mounted on a suitable heat sink. The device's power dissipation capabilities are 3.13W when in free air and 130W when mounted on a heat-conductive surface. The MOSFET features a threshold voltage of 10V and can tolerate gate-to-source voltages of up to ±30V, making it suitable for various high-voltage applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.