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FQB65N06TMN-Channel 60 V 65A (Tc) 3.75W (Ta), 150W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-FQB65N-956379
ManufacturerFairchild Semiconductor
MPN #.FQB65N06TM
Estimated Lead Time-
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DatasheetDatasheetFQB65N06TM(PDF)
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In Stock: 4325
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Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C65A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)65 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2410 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.75W (Ta), 150W (Tc)
RDS(on) Drain-to-Source On Resistance16mOhm @ 32.5A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
FQB65N06TM
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQB65N06TM is an N-Channel MOSFET manufactured by Fairchild Semiconductor. It is designed for high-performance operation, featuring a maximum voltage rating of 60 V and a current capacity of 65A at a case temperature (Tc). With a surface mount TO-263 (D2PAK) package, this MOSFET supports a power dissipation of 3.75W in free air and up to 150W with proper cooling at Tc. It offers a gate charge of 65 nC at 10 V, ensuring efficient switching, and has an on-resistance of 16 milliohms at 32.5A, 10V. This makes it suitable for applications requiring reliable and efficient switching capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.