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FQB16N15TMN-Channel 150 V 16.4A (Tc) 3.75W (Ta), 108W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-FQB16N-1024984
ManufacturerFairchild Semiconductor
MPN #.FQB16N15TM
Estimated Lead Time-
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DatasheetDatasheetFQB16N15TM(PDF)
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In Stock: 671
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Shipping DateNovember 17, 2024
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Technical Specifications
SeriesQFET®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C16.4A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)910 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.75W (Ta), 108W (Tc)
RDS(on) Drain-to-Source On Resistance160mOhm @ 8.2A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
FQB16N15TM
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQB16N15TM is an N-Channel MOSFET manufactured by Fairchild Semiconductor, designed for efficient power management in electronic systems. It can handle a maximum voltage of 150V and a current up to 16.4A when mounted on a thermally efficient surface. The MOSFET features a low on-state resistance of 160 milliohms at 8.2A and 10V, ensuring minimal power loss during operation. With a power dissipation capacity of 3.75W in a free-air environment and 108W when properly mounted on a thermally conductive surface, its TO-263 (D2PAK) package design facilitates surface mounting, making it suitable for various electronic circuit requirements.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.