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FQAF8N80N-Channel 800 V 5.9A (Tc) 107W (Tc) Through Hole TO-3PF

1:$1.3730

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ABRmicro #.ABR2045-FQAF8N-999490
ManufacturerFairchild Semiconductor
MPN #.FQAF8N80
Estimated Lead Time-
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DatasheetDatasheetFQAF8N80(PDF)
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In Stock: 389
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3730
Ext. Price$ 1.3730
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
166$1.3730$227.8770
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C5.9A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)57 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2350 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation107W (Tc)
RDS(on) Drain-to-Source On Resistance1.2Ohm @ 2.95A, 10V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3 Full Pack
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQAF8N80
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQAF8N80 is an N-Channel MOSFET manufactured by Fairchild Semiconductor, designed for high-voltage applications. It features a drain-source voltage rating of 800V and a continuous drain current of 5.9A at the case temperature (Tc), with a power dissipation capacity of 107W at Tc. The device is housed in a robust TO-3PF through-hole package, ensuring ease of handling and installation. Its gate threshold voltage is specified at 10V, with a maximum gate-source voltage of ±30V. Additionally, it has a typical gate charge of 57 nC at 10 V, indicating efficiency in switching operations.
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