FQAF70N15N-Channel 150 V 44A (Tc) 130W (Tc) Through Hole TO-3PF
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ABRmicro #.ABR2045-FQAF70-999287
ManufacturerFairchild Semiconductor
MPN #.FQAF70N15
Estimated Lead Time-
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Datasheet
FQAF70N15(PDF)
FQAF70N15(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C44A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)175 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5400 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation130W (Tc)
RDS(on) Drain-to-Source On Resistance28mOhm @ 22A, 10V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-3P-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQAF70N15, manufactured by Fairchild Semiconductor, is an N-Channel MOSFET designed for high power applications. It features a maximum drain-source voltage of 150 V and can handle a continuous current of up to 44A at its case temperature rating (Tc), with a power dissipation capacity of 130W at Tc. This MOSFET comes in a TO-3PF through-hole package, providing a robust and durable form factor for various electronic designs. Its gate-source voltage is rated at ±25V, and it exhibits a gate charge of 175 nC at 10 V, which indicates the switching performance characteristics. The part offers an on-resistance of 28mOhm at a drain current of 22A and a gate-source voltage of 10V, making it efficient in terms of conduction losses.
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