FQAF6N80N-Channel 800 V 4.4A (Tc) 90W (Tc) Through Hole TO-3PF
1:$1.3200
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ABRmicro #.ABR2045-FQAF6N-963342
ManufacturerFairchild Semiconductor
MPN #.FQAF6N80
Estimated Lead Time-
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Datasheet
FQAF6N80(PDF)
FQAF6N80(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3200
Ext. Price$ 1.3200
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Price Gradients
Qty.Unit PriceExt. Price
173$1.3200$228.2950
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C4.4A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1500 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation90W (Tc)
RDS(on) Drain-to-Source On Resistance1.95Ohm @ 2.2A, 10V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQAF6N80 is a metal oxide semiconductor field-effect transistor (MOSFET) produced by Fairchild Semiconductor. It is an N-channel device designed for use in high-voltage applications, capable of handling a maximum drain-source voltage of 800 volts and a continuous current of 4.4 amps under optimal thermal conditions (Tc). This MOSFET features a drain-source on-state resistance of 1.95 ohms at a drain current of 2.2 amps and gate-source voltage of 10 volts. With a total power dissipation capacity of 90 watts, it is built for through-hole mounting using the TO-3PF package, facilitating heat dissipation and ensuring stable performance in demanding electrical environments.
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