FQAF19N20LN-Channel 200 V 16A (Tc) 85W (Tc) Through Hole TO-3PF
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ABRmicro #.ABR2045-FQAF19-1006023
ManufacturerFairchild Semiconductor
MPN #.FQAF19N20L
Estimated Lead Time-
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Datasheet
FQAF19N20L(PDF)
FQAF19N20L(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C16A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)35 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2200 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation85W (Tc)
RDS(on) Drain-to-Source On Resistance140mOhm @ 8A, 10V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-3P-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQAF19N20L is an N-Channel MOSFET manufactured by Fairchild Semiconductor, designed for use in a variety of electronic circuits. It features a maximum drain-source voltage of 200 volts and can handle a continuous drain current of up to 16 amps when appropriately cooled. The device is housed in a TO-3PF through-hole package, making it suitable for applications that require efficient heat dissipation and easy mounting. With an on-resistance of 140 milliohms at 8 amps and 10 volts, this MOSFET ensures efficient current switching and low power loss. It also has a gate-source voltage tolerance of ±20 volts, contributing to its robustness in different operating conditions.
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