FQAF19N20N-Channel 200 V 15A (Tc) 85W (Tc) Through Hole TO-3PF
1:$0.6290
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ABRmicro #.ABR2045-FQAF19-951799
ManufacturerFairchild Semiconductor
MPN #.FQAF19N20
Estimated Lead Time-
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Datasheet
FQAF19N20(PDF)
FQAF19N20(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.6290
Ext. Price$ 0.6290
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
360$0.6290$226.4400
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1600 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation85W (Tc)
RDS(on) Drain-to-Source On Resistance150mOhm @ 7.5A, 10V
Package Type (Mfr.)TO-3PF
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3 Full Pack
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQAF19N20 is an N-Channel MOSFET manufactured by Fairchild Semiconductor, designed for efficient power management in electronic systems. This discrete transistor can handle a drain-source voltage of up to 200 volts and a continuous current of 15 amps under specified conditions. It features a low on-state resistance of 150 milliohms at 7.5A and 10V, enhancing its efficiency. With a total gate charge of 40 nanocoulombs at 10 volts, the component ensures rapid switching capability. Encased in a TO-3PF through-hole package, it can dissipate up to 85 watts of power, facilitating effective thermal management in various electronic applications.
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