FQA34N25N-Channel 250 V 34A (Tc) 245W (Tc) Through Hole TO-3P
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ABRmicro #.ABR2045-FQA34N-1025446
ManufacturerFairchild Semiconductor
MPN #.FQA34N25
Estimated Lead Time-
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Datasheet
FQA34N25(PDF)
FQA34N25(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C34A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2750 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation245W (Tc)
RDS(on) Drain-to-Source On Resistance85mOhm @ 17A, 10V
Package Type (Mfr.)TO-3P
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-3P-3, SC-65-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FQA34N25 is an N-channel MOSFET manufactured by Fairchild Semiconductor, designed to handle substantial power requirements. It is rated for a maximum voltage of 250 V and can conduct a current of up to 34 A at its maximum theoretical thermal control (Tc). The device can dissipate up to 245 W of power, making it suitable for high-power applications. It features a gate charge of 80 nC at 10 V and a gate threshold voltage of 5 V at 250 µA. Encased in a TO-3P package, it is designed for through-hole mounting, providing robust mechanical stability and heat dissipation capabilities.
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