FDZ204PP-Channel 20 V 4.5A (Ta) 1.8W (Ta) Surface Mount 9-BGA (2x2.1)
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ABRmicro #.ABR2045-FDZ204-1001490
ManufacturerFairchild Semiconductor
MPN #.FDZ204P
Estimated Lead Time-
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Datasheet
FDZ204P(PDF)
FDZ204P(PDF)
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Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C4.5A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)884 pF @ 10 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.8W (Ta)
RDS(on) Drain-to-Source On Resistance45mOhm @ 4.5A, 4.5V
Package Type (Mfr.)9-BGA (2x2.1)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.5V @ 250µA
Package / Case9-WFBGA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDZ204P is a P-Channel MOSFET manufactured by Fairchild Semiconductor, designed for surface mount applications. It operates with a voltage rating of 20 V and can handle a current of up to 4.5 A, dissipating power up to 1.8 W in typical applications. The compact package is a 9-Ball Grid Array (BGA) with dimensions of 2x2.1 mm. Key electrical characteristics include a gate threshold voltage of 1.5 V at 250 µA, an input capacitance of 884 pF at 10 V, and a total gate charge of 13 nC at 4.5 V.
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