FDS7066ASN3N-Channel 30 V 19A (Ta) 3W (Ta) Surface Mount 8-SO
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ABRmicro #.ABR2045-FDS706-1013896
ManufacturerFairchild Semiconductor
MPN #.FDS7066ASN3
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Datasheet
FDS7066ASN3(PDF)
FDS7066ASN3(PDF)
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Shipping DateNovember 16, 2024
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
Technical Specifications
SeriesPowerTrench®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C19A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)62 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2460 pF @ 15 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3W (Ta)
RDS(on) Drain-to-Source On Resistance4.8mOhm @ 19A, 10V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 1mA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS7066ASN3 is a surface mount N-Channel MOSFET manufactured by Fairchild Semiconductor, designed to handle a maximum voltage of 30 V and a continuous current of 19A at ambient temperature conditions. It features a resistance of 4.8 milliohms at 19A when a gate-source voltage of 10V is applied. The part also offers a junction capacitance of 2460 pF when the drain-source voltage is 15 V. Housed in an 8-SO package, this MOSFET is suitable for efficient power management in compact form factors, with a power dissipation rating of 3W at ambient temperature.
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