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FDS4072N7N-Channel 40 V 12.4A (Ta) 3W (Ta) Surface Mount 8-SO

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ABRmicro #.ABR2045-FDS407-998065
MPN #.FDS4072N7
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In Stock: 6842
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Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C12.4A (Ta)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)46 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4299 pF @ 20 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3W (Ta)
RDS(on) Drain-to-Source On Resistance9mOhm @ 13.7A, 10V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS4072N7 is a surface mount N-Channel MOSFET, manufactured by Fairchild Semiconductor, designed to handle 40 volts and a continuous current of 12.4 amperes when housed in a standard 8-SO package. It has a power dissipation capacity of 3 watts under specified conditions. The device features gate-source voltage ratings up to ±12 volts and exhibits a gate charge of 46 nanocoulombs at 4.5 volts. This MOSFET is a metal oxide semiconductor device, suitable for various electronic circuit implementations requiring efficient voltage and current control.
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