FDS3570N-Channel 80 V 9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
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ABRmicro #.ABR2045-FDS357-1024544
ManufacturerFairchild Semiconductor
MPN #.FDS3570
Estimated Lead Time-
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Datasheet
FDS3570(PDF)
FDS3570(PDF)
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Shipping DateNovember 17, 2024
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
Technical Specifications
SeriesPowerTrench®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C9A (Ta)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)76 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2750 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance20mOhm @ 9A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDS3570 is an N-Channel MOSFET manufactured by Fairchild Semiconductor, designed to handle up to 80 volts and 9 amperes at a junction-to-ambient power dissipation of 2.5 watts. It is housed in a compact 8-pin Small Outline Integrated Circuit (SOIC) package suitable for surface mounting. The device features a gate-source voltage tolerance of ±20 volts and a gate threshold voltage starting at 4 volts when driven by a current of 250 microamperes. It exhibits a total gate charge of 76 nanocoulombs when the gate-source voltage is 10 volts, highlighting its efficiency in switching applications.
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