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FDP6670ALN-Channel 30 V 80A (Ta) 68W (Tc) Through Hole TO-220-3

1:$0.4560

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ABRmicro #.ABR2045-FDP667-965412
ManufacturerFairchild Semiconductor
MPN #.FDP6670AL
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetFDB6670AL(PDF)
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In Stock: 18809
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
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Unit Price$ 0.4560
Ext. Price$ 0.4560
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Price Gradients
Qty.Unit PriceExt. Price
503$0.4560$229.2740
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesPowerTrench®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C80A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)33 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2440 pF @ 15 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 175°C (TJ)
Maximum Power Dissipation68W (Tc)
RDS(on) Drain-to-Source On Resistance6.5mOhm @ 40A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FDB6670AL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDP6670AL is a N-Channel MOSFET manufactured by Fairchild Semiconductor, designed for efficient power management and switch control. It comes in a TO-220-3 package, allowing for through-hole mounting. This transistor can handle a maximum voltage of 30V and a continuous current of 80A at ambient temperature (Ta), with a power dissipation capacity of 68W when mounted on a case (Tc). It features a very low on-resistance of 6.5mOhm when operating at 40A and 10V, ensuring minimal power loss. The gate threshold voltage is specified at 3V with a gate current of 250µA, and it can tolerate gate-source voltages up to ±20V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.