FDP2670N-Channel 200 V 19A (Ta) 93W (Tc) Through Hole TO-220-3
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ABRmicro #.ABR2045-FDP267-945858
ManufacturerFairchild Semiconductor
MPN #.FDP2670
Estimated Lead Time-
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Datasheet
FDB2670(PDF)
FDB2670(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
SeriesPowerTrench®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C19A (Ta)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1320 pF @ 100 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 175°C (TJ)
Maximum Power Dissipation93W (Tc)
RDS(on) Drain-to-Source On Resistance130mOhm @ 10A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDP2670 is an N-Channel MOSFET produced by Fairchild Semiconductor, housed in a TO-220-3 package for through-hole mounting. It is designed to handle a voltage of up to 200 V and a continuous drain current of 19A at a specified temperature. The part can dissipate up to 93W of power under controlled conditions. It features a gate charge of 38 nC at 10 V and a gate threshold voltage of 4.5V at 250µA, making it suitable for a variety of electrical characteristics and performance requirements.
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