FDP15N50N-Channel 500 V 15A (Tc) 300W (Tc) Through Hole TO-220-3
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ABRmicro #.ABR2045-FDP15N-997274
ManufacturerFairchild Semiconductor
MPN #.FDP15N50
Estimated Lead Time-
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Datasheet
FDP15N50(PDF)
FDP15N50(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK) Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C15A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)41 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1850 pF @ 25 V
MfrFairchild Semiconductor
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 7.5A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDP15N50 is an N-channel MOSFET manufactured by Fairchild Semiconductor, designed for high-voltage and high-current applications. It features a maximum voltage rating of 500V and a continuous current rating of 15A when properly cooled (case temperature, Tc). Housed in a TO-220-3 through-hole package, it offers a high power dissipation capacity of 300W under optimal thermal conditions. Key electrical characteristics include a gate charge of 41 nC at 10V and a typical input capacitance of 1850 pF at 25V, making it suitable for efficient switching operations.
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