FDMS8674N-Channel 30 V 17A (Ta), 21A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)
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ABRmicro #.ABR2045-FDMS86-995876
ManufacturerFairchild Semiconductor
MPN #.FDMS8674
Estimated Lead Time-
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Datasheet
FDMS8674(PDF)
FDMS8674(PDF)
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Shipping DateNovember 16, 2024
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
Technical Specifications
SeriesPowerTrench®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C17A (Ta), 21A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)37 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2320 pF @ 15 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 78W (Tc)
RDS(on) Drain-to-Source On Resistance5mOhm @ 17A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-PowerTDFN
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMS8674, manufactured by Fairchild Semiconductor, is a surface mount N-Channel MOSFET designed for efficient power switching applications. It operates at a voltage rating of 30V and can handle currents up to 17A (Ta) and 21A (Tc), with a power dissipation of 2.5W (Ta) and 78W (Tc) in an 8-PQFN (5x6) package. The part features a low gate threshold voltage of 4.5V, allowing it to turn on effectively with lower drive voltages, and exhibits a low R_ds(on) of 5mOhm at 17A, 10V, ensuring minimal conduction losses. Additionally, it offers a gate charge of 2320 pF at 15 V, which facilitates rapid switching speeds.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.