FDMS8670N-Channel 30 V 24A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)
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ABRmicro #.ABR2045-FDMS86-950509
ManufacturerFairchild Semiconductor
MPN #.FDMS8670
Estimated Lead Time-
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Datasheet
FDMS8670(PDF)
FDMS8670(PDF)
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Shipping DateNovember 16, 2024
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N-Channel 500 V 1.6A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount TO-252 (DPAK)
Technical Specifications
SeriesPowerTrench®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C24A (Ta), 42A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)63 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3940 pF @ 15 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 78W (Tc)
RDS(on) Drain-to-Source On Resistance2.6mOhm @ 24A, 10V
Package Type (Mfr.)8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-PowerTDFN
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDMS8670 is a surface mount N-Channel MOSFET manufactured by Fairchild Semiconductor. It is designed to handle a continuous current of 24A at ambient temperature (Ta) and up to 42A with proper case temperature (Tc), featuring a power dissipation capability of 2.5W at Ta and 78W at Tc. The MOSFET has a notably low on-resistance of 2.6 milliohms when conducting 24A at a gate-source voltage of 10V, making it efficient for switching applications. Encased in an 8-PQFN package measuring 5mm by 6mm, it supports gate-source voltages of 4.5V and 10V, allowing for versatility in integration with various electronic circuits.
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