FDFS2P753AZP-Channel 30 V 3A (Ta) 3.1W (Ta) Surface Mount 8-SOIC
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ABRmicro #.ABR2045-FDFS2P-998788
ManufacturerFairchild Semiconductor
MPN #.FDFS2P753AZ
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Datasheet
FDFS2P753AZ(PDF)
FDFS2P753AZ(PDF)
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Shipping DateNovember 16, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C3A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)455 pF @ 15 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.1W (Ta)
RDS(on) Drain-to-Source On Resistance115mOhm @ 3A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDFS2P753AZ is a P-Channel MOSFET manufactured by Fairchild Semiconductor, designed for surface mount applications and housed in an 8-SOIC package. It is capable of handling a maximum voltage of 30V and a current of up to 3A with a power dissipation of 3.1W at ambient temperature (Ta). The device features an on-resistance of 115mOhm at 3A and 10V, supported by drive voltages of 4.5V and 10V, and has a gate charge of 11 nC at 10V. Suitable for efficient switching in compact electronic systems, the MOSFET provides a balance of performance and reliability in various circuitry configurations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.