FDFS2P102P-Channel 20 V 3.3A (Ta) 900mW (Ta) Surface Mount 8-SOIC
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ABRmicro #.ABR2045-FDFS2P-1003111
ManufacturerFairchild Semiconductor
MPN #.FDFS2P102
Estimated Lead Time-
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Datasheet
FDFS2P102(PDF)
FDFS2P102(PDF)
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C3.3A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)10 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)270 pF @ 10 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation900mW (Ta)
RDS(on) Drain-to-Source On Resistance125mOhm @ 3.3A, 10V
Package Type (Mfr.)8-SOIC
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The FDFS2P102 from Fairchild Semiconductor is a surface-mount semiconductor device housed in an 8-SOIC package. It features a P-Channel MOSFET with a voltage rating of 20 V and a current capacity of 3.3A (Ta), delivering up to 900mW of power dissipation at room temperature. Additionally, it incorporates an isolated Schottky diode with a forward voltage of 2V at a 250µA current output, and it is designed to handle voltages of 4.5V and 10V. This device combines MOSFET switching capabilities with the efficiency characteristics of Schottky diodes, making it suitable for compact electronic applications requiring efficient power management.
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