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FDB6670ALN-Channel 30 V 80A (Ta) 68W (Tc) Surface Mount TO-263 (D2PAK)

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ABRmicro #.ABR2045-FDB667-1048544
ManufacturerFairchild Semiconductor
MPN #.FDB6670AL
Estimated Lead Time-
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DatasheetDatasheetFDB6670AL(PDF)
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In Stock: 64236
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Shipping DateNovember 17, 2024
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Technical Specifications
SeriesPowerTrench®
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C80A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)33 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2440 pF @ 15 V
MfrFairchild Semiconductor
Mounting StyleSurface Mount
Operating Temperature-65°C ~ 175°C (TJ)
Maximum Power Dissipation68W (Tc)
RDS(on) Drain-to-Source On Resistance6.5mOhm @ 40A, 10V
Package Type (Mfr.)TO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
FDB6670AL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The FDB6670AL from Fairchild Semiconductor is an N-channel MOSFET designed for efficient power management in various electronics. It supports a maximum drain-source voltage of 30 V and a continuous drain current of 80 A when mounted on a suitable heat sink. The MOSFET can dissipate up to 68 W of power with proper thermal management. Housed in a surface-mount TO-263 (D2PAK) package, the device offers a gate threshold voltage of 3 V at 250 µA. It can handle gate-source voltages up to ±20V and is optimized for logic level driving voltages of 4.5 V and 10 V.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.