VS-GB150TH120NIGBT Module Half Bridge 1200 V 300 A 1008 W Chassis Mount Double INT-A-PAK
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ABRmicro #.ABR297-VS-GB1-2549
ManufacturerVishay General Semiconductor
MPN #.VS-GB150TH120N
Estimated Lead Time-
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberGB150
ConfigurationHalf Bridge
Collector Current (Iᴄ)@25°C300 A
Collector Cut-off Current (Iᴄᴇs)(Max.)5 mA
IGBT Type-
InputStandard
Input Capacitance (Ciᴇs) @ (Veᴇ)11 nF @ 25 V
Mounting StyleChassis Mount
NTC ThermistorNo
Operating Temperature150°C (TJ)
Power - Max1008 W
Package Type (Mfr.)Double INT-A-PAK
Collector-to-Emitter On Voltage (Vᴄᴇ(on))@(Vɢᴇ)(Iᴄ)2.35V @ 15V, 150A
Collector-Emitter Breakdown Voltage (Max.)1200 V
Package / CaseDouble INT-A-PAK (3 + 4)
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PCN Design/Specification
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The VS-GB150TH120N is an IGBT module manufactured by Vishay General Semiconductor, featuring a half-bridge configuration. It is designed to handle a maximum collector-emitter voltage of 1200 V, a continuous collector current of 300 A, and a total power dissipation of 1008 W. This module is provided in a double INT-A-PAK package for chassis mounting. It has a standard gate threshold current specification of 5 mA and a capacitance of 11 nF at 25 V.
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