VS-GP250SA60SIGBT Module PT, Trench Single 600 V 380 A 893 W Chassis Mount SOT-227
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ABRmicro #.ABR297-VS-GP2-2696
ManufacturerVishay General Semiconductor
MPN #.VS-GP250SA60S
Estimated Lead Time-
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberGP250
ConfigurationSingle
Collector Current (Iᴄ)@25°C380 A
Collector Cut-off Current (Iᴄᴇs)(Max.)100 µA
IGBT TypePT, Trench
InputStandard
Mounting StyleChassis Mount
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Power - Max893 W
Package Type (Mfr.)SOT-227
Collector-to-Emitter On Voltage (Vᴄᴇ(on))@(Vɢᴇ)(Iᴄ)1.3V @ 15V, 100A
Collector-Emitter Breakdown Voltage (Max.)600 V
Package / CaseSOT-227-4, miniBLOC
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PCN Design/Specification
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The VS-GP250SA60S is an insulated gate bipolar transistor (IGBT) module manufactured by Vishay General Semiconductor. It features a trench single IGBT design with a collector-emitter voltage of 600 V and a continuous collector current rating of 380 A. The module is capable of handling a maximum power dissipation of 893 W. It is encapsulated in a SOT-227 package, suitable for chassis mounting. The module's forward voltage drop is 1.3 V at a gate-emitter voltage of 15 V and a current of 100 A, with a leakage current of 100 µA. This IGBT module combines efficient switching performance with robust thermal characteristics, making it a reliable component for high-power electronic systems.
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