MPSA42PHBipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 625 mW Through Hole TO-92-3
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ABRmicro #.ABR276-MPSA42-6021
ManufacturerVishay General Semiconductor
MPN #.MPSA42PH
Estimated Lead Time-
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Min.&Mult.1
Packaging
Bulk
Shipping DateDecember 23, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberMPSA42
Collector Current (Iᴄ)@25°C500 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA, 10V
Frequency - Transition50MHz
MfrVishay General Semiconductor - Diodes Division
Mounting StyleThrough Hole
Operating Temperature-
Power - Max625 mW
Package Type (Mfr.)TO-92-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
Collector-Emitter Breakdown Voltage (Max.)300 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
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info@Abrmicro.com Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
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Additional Details
The MPSA42PH is a bipolar junction transistor (BJT) manufactured by Vishay General Semiconductor. It is an NPN transistor with a maximum voltage rating of 300 volts and can handle a continuous current of up to 500 milliamps. The transistor features a frequency transition of 50MHz and a power dissipation of 625 milliwatts in a TO-92-3 through-hole package. It has a DC current gain of 40 at 30mA and 10V, with a collector cut-off current (ICBO) of 100nA. Additionally, the device exhibits a saturation voltage of 500mV at a collector current of 2mA and base current of 20mA, making it suitable for general-purpose amplification and switching applications.
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