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MPSA42PHBipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 625 mW Through Hole TO-92-3
N/A
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ABRmicro #.ABR2045-MPSA42-6021
ManufacturerVishay General Semiconductor
MPN #.MPSA42PH
Estimated Lead Time-
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In Stock: 15
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Shipping DateNovember 3, 2024
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IGBT Module NPT Half Bridge Inverter 650 V 201 A 600 W Module Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberMPSA42
Collector Current (Iᴄ)@25°C500 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA, 10V
Frequency - Transition50MHz
MfrVishay General Semiconductor - Diodes Division
Mounting StyleThrough Hole
Operating Temperature-
Power - Max625 mW
Package Type (Mfr.)TO-92-3
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
Collector-Emitter Breakdown Voltage (Max.)300 V
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)