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VS-GB100TP120NIGBT Module Half Bridge 1200 V 200 A 650 W Chassis Mount INT-A-PAK

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ABRmicro #.ABR2045-VS-GB1-2680
MPN #.VS-GB100TP120N
Estimated Lead Time-
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Bulk
Shipping DateNovember 3, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberGB100
ConfigurationHalf Bridge
Collector Current (Iᴄ)@25°C200 A
Collector Cut-off Current (Iᴄᴇs)(Max.)5 mA
IGBT Type-
InputStandard
Input Capacitance (Ciᴇs) @ (Veᴇ)7.43 nF @ 25 V
Mounting StyleChassis Mount
NTC ThermistorNo
Operating Temperature150°C (TJ)
Power - Max650 W
Package Type (Mfr.)INT-A-PAK
Collector-to-Emitter On Voltage (Vᴄᴇ(on))@(Vɢᴇ)(Iᴄ)2.2V @ 15V, 100A
Collector-Emitter Breakdown Voltage (Max.)1200 V
Package / CaseINT-A-Pak
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)