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NXH80T120L2Q0SGIGBT Module T-Type 1200 V 65 A 146 W Through Hole 20-PIM/Q0PACK (55x32.5)

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ABRmicro #.ABR2045-NXH80T-1564666
ManufacturerOnsemi
MPN #.NXH80T120L2Q0SG
Estimated Lead Time-
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In Stock: 137
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tray
Shipping DateNovember 5, 2024
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Technical Specifications
Series-
Packaging
Tray
Lifecycle StatusActive
Base Product NumberNXH80
ConfigurationT-Type
Collector Current (Iᴄ)@25°C65 A
Collector Cut-off Current (Iᴄᴇs)(Max.)100 µA
IGBT Type-
InputStandard
Input Capacitance (Ciᴇs) @ (Veᴇ)1.99 nF @ 20 V
Mounting StyleThrough Hole
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C (TJ)
Power - Max146 W
Package Type (Mfr.)20-PIM/Q0PACK (55x32.5)
Collector-to-Emitter On Voltage (Vᴄᴇ(on))@(Vɢᴇ)(Iᴄ)2.8V @ 15V, 80A
Collector-Emitter Breakdown Voltage (Max.)1200 V
Package / CaseModule
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Environmental Information
onsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Devices Fab 09/Apr/2018
Video File
Energy Infrastructure | Solutions for Solar Inverters
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)