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BUH150Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220

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ABRmicro #.ABR276-BUH150-903166
ManufacturerOnsemi
MPN #.BUH150
Estimated Lead Time-
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DatasheetDatasheetBUH150 (PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
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Technical Specifications
SeriesSWITCHMODE™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberBUH15
Collector Current (Iᴄ)@25°C15 A
Collector Cut-off Current (Iᴄᴇs)(Max.)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce8 @ 10A, 5V
Frequency - Transition23MHz
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-65°C ~ 150°C (TJ)
Power - Max150 W
Package Type (Mfr.)TO-220
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic5V @ 4A, 20A
Collector-Emitter Breakdown Voltage (Max.)700 V
Package / CaseTO-220-3
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Extended Links
Datasheets
BUH150
Environmental Information
onsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 06/Oct/2006
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The BUH150 is a high-performance NPN bipolar junction transistor manufactured by Onsemi. It is designed to handle high voltages and currents, featuring a maximum voltage rating of 700 V and a current rating of 15 A. The transistor has a power dissipation capability of 150 W, making it suitable for demanding applications. It operates with a DC current gain of 8 at 10 A, and can function efficiently at a frequency of up to 23 MHz. The package is a TO-220 through-hole, providing ease of mounting and effective heat dissipation. Additionally, its electrical parameters include a collector-emitter saturation voltage of 5 V at 4 A and a collector cutoff current of 100 µA, ensuring reliable performance in various conditions.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.