Image is for reference only, the actual product serves as the standard.
FDG6301NMosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)

1:$0.3590

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR289-FDG630-903207
ManufacturerOnsemi
MPN #.FDG6301N
Estimated Lead Time16 Weeks
SampleGet Free Sample
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 47926
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.3590
Ext. Price$0.3590
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3590$0.3590
10$0.3050$3.0490
100$0.2110$21.1440
500$0.1660$82.8750
1000$0.1350$134.9380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberFDG6301
Configuration2 N-Channel (Dual)
Continuous Drain Current (ID) @ 25°C220mA
Drain-to-Source Voltage (VDS)25V
FET FeatureLogic Level Gate
Gate Charge Total (Qg)(Max.)0.4nC @ 4.5V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9.5pF @ 10V
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Power - Max300mW
RDS(on) Drain-to-Source On Resistance4Ohm @ 220mA, 4.5V
Package Type (Mfr.)SC-88 (SC-70-6)
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.5V @ 250µA
Package / Case6-TSSOP, SC-88, SOT-363
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Related Parts
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDT86106LZ$1.1630
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
N-Channel 250 V 3.6A (Tc) 52W (Tc) Through Hole TO-220-3
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Additional Details
The FDG6301N is a dual N-channel MOSFET array manufactured by Onsemi, featuring a compact surface-mount SC-88 (SC-70-6) package. It is designed to handle voltages up to 25V and currents up to 220mA, with a power dissipation capacity of 300mW. This MOSFET array is characterized by its efficient switching capabilities and low on-resistance, making it suitable for compact electronic circuits. It requires a gate-source voltage of 1.5V at 250µA to operate, demonstrating its compatibility with lower voltage logic levels.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.