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FQP4N25N-Channel 250 V 3.6A (Tc) 52W (Tc) Through Hole TO-220-3

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ABRmicro #.ABR2045-FQP4N2-903461
ManufacturerOnsemi
MPN #.FQP4N25
Estimated Lead Time-
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DatasheetDatasheetFQP4N25(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 3, 2024
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Technical Specifications
SeriesQFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberFQP4
Continuous Drain Current (ID) @ 25°C3.6A (Tc)
Drain-to-Source Voltage (VDS)250 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)5.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)200 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation52W (Tc)
RDS(on) Drain-to-Source On Resistance1.75Ohm @ 1.8A, 10V
Package Type (Mfr.)TO-220-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-220-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
FQP4N25
Environmental Information
onsemi REACHonsemi RoHS
Product Drawings
TO220B03 Pkg Drawing
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)