PSMNR90-30BL,118N-Channel 30 V 120A (Tc) 306W (Tc) Surface Mount D2PAK
1:$2.8120
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ABRmicro #.ABR2045-PSMNR9-1003659
ManufacturerNexperia USA Inc.
MPN #.PSMNR90-30BL,118
Estimated Lead Time13 Weeks
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Datasheet
PSMNR90-30BL(PDF)
PSMNR90-30BL(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.8120
Ext. Price$ 2.8120
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.8120$2.8120
10$2.3630$23.6300
100$1.9110$191.1440
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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P-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6 Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPSMNR90
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)243 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14850 pF @ 15 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation306W (Tc)
RDS(on) Drain-to-Source On Resistance1mOhm @ 25A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 1mA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Assembly/Origin
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part PSMNR90-30BL,118 from Nexperia USA Inc. is a high-performance N-Channel MOSFET transistor designed for efficient power management. It operates at a maximum voltage of 30 V and can handle a continuous drain current of up to 120A. The transistor is contained in a surface-mount D2PAK package and can dissipate up to 306W of power. It exhibits a low on-state resistance of 1 mOhm at 25A with a gate-source voltage of 10V, ensuring minimal power loss. Additionally, it has an input capacitance of 14850 pF at 15 V and a total gate charge of 243 nC at 10 V, which contributes to its fast switching capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.