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PMPB10UPXP-Channel 12 V 10A (Ta) 1.7W (Ta), 13mW (Tc) Surface Mount DFN2020MD-6
1:$0.3510
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ABRmicro #.ABR278-PMPB10-245971
ManufacturerNexperia
MPN #.PMPB10UPX
Estimated Lead Time-
SampleGet Free Sample
DatasheetPMPB10UP (PDF)
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$0.3510
Ext. Price$0.3510
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Price Gradients
Qty.Unit PriceExt. Price
1$0.3510$0.3510
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberPMPB10
Continuous Drain Current (ID) @ 25°C10A (Ta)
Drain-to-Source Voltage (VDS)12 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2200 pF @ 6 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.7W (Ta), 13mW (Tc)
RDS(on) Drain-to-Source On Resistance11.5mOhm @ 10A, 4.5V
Package Type (Mfr.)DFN2020MD-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)900mV @ 250µA
Package / Case6-UDFN Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
PCN Assembly/Origin
PCN Obsolescence/ EOL
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The PMPB10UPX is a P-Channel MOSFET manufactured by Nexperia USA Inc., designed for surface mounting in a compact DFN2020MD-6 package. It operates with a maximum voltage of 12V and can handle a current of up to 10A with a power dissipation of 1.7W when measured at ambient temperature (Ta). The MOSFET features a low on-resistance of 11.5 milliohms at a gate-source voltage of 4.5V and a drain current of 10A. The device also has a capacitance of 2200 pF at 6V, making it efficient for switching applications that require reliable performance in a small form factor.
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