BC856BW/DG/B2,115Bipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 200 mW Surface Mount SOT-323
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ABRmicro #.ABR276-BC856B-902882
ManufacturerNexperia
MPN #.BC856BW/DG/B2,115
Estimated Lead Time-
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Datasheet
BC856W, BC857W,... (PDF)
BC856W, BC857W,... (PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberBC856
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce220 @ 2mA, 5V
Frequency - Transition100MHz
Grade-
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Power - Max200 mW
Qualification-
Package Type (Mfr.)SOT-323
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Collector-Emitter Breakdown Voltage (Max.)65 V
Package / CaseSC-70, SOT-323
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PCN Design/Specification
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Additional Details
The BC856BW/DG/B2,115 is a PNP bipolar junction transistor manufactured by Nexperia USA Inc. It is characterized by a collector-emitter voltage rating of 65 V and a collector current capacity of up to 100 mA, making it suitable for small-signal amplification purposes. The transistor operates at a frequency of 100 MHz and has a power dissipation limit of 200 mW. Thanks to its surface-mount design in the SOT-323 package, it is ideal for compact electronic designs. Key electrical attributes include a current gain (hFE) of 220 at 2 mA and 5 V, an input offset of 15 nA, and a saturation voltage of 600 mV at 5 mA and 100 mA.
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