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BUK9M4R3-40HXN-Channel 40 V 95A (Tc) 90W (Tc) Surface Mount LFPAK33
1:$1.3690
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-BUK9M4-58659
ManufacturerNexperia
MPN #.BUK9M4R3-40HX
Estimated Lead Time13 Weeks
SampleGet Free Sample
DatasheetBUK9M4R3-40H (PDF)
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In Stock: 2137
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
* Quantity
Unit Price$1.3690
Ext. Price$1.3690
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3690$1.3690
10$1.1220$11.2200
100$0.8730$87.3380
500$0.7410$370.2810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesTrenchMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBUK9M4
Continuous Drain Current (ID) @ 25°C95A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
GradeAutomotive
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature175°C
Maximum Power Dissipation90W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance4.3mOhm @ 95A, 10V
Package Type (Mfr.)LFPAK33
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)+16V, -10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)-
Package / CaseSOT-1210, 8-LFPAK33 (5-Lead)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
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Additional Details
The BUK9M4R3-40HX is a surface mount N-Channel MOSFET transistor manufactured by Nexperia USA Inc. It is designed to handle a maximum voltage of 40 V and a continuous current of 95 A at a case temperature of 25°C, delivering a power dissipation of up to 90W under the same conditions. Packaged in a compact LFPAK33 form factor, this MOSFET features a low on-state resistance of 4.3 mOhm when operating at 95 A and a gate-source voltage of 10V, making it suitable for efficient switching in various electronic circuits.
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