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PSMN9R8-30MLC,115N-Channel 30 V 50A (Tc) 45W (Tc) Surface Mount LFPAK33

1:$0.5460

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PSMN9R-1036239
ManufacturerNexperia USA Inc.
MPN #.PSMN9R8-30MLC,115
Estimated Lead Time13 Weeks
SampleGet Free Sample
DatasheetDatasheetPSMN9R8-30MLC(PDF)
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In Stock: 356
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 0.5460
Ext. Price$ 0.5460
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5460$0.5460
10$0.4660$4.6640
100$0.3240$32.4060
500$0.2530$126.4380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPSMN9R8
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)10.9 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)690 pF @ 15 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation45W (Tc)
RDS(on) Drain-to-Source On Resistance9.8mOhm @ 15A, 10V
Package Type (Mfr.)LFPAK33
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.95V @ 1mA
Package / CaseSOT-1210, 8-LFPAK33 (5-Lead)
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
PSMN9R8-30MLC
PCN Assembly/Origin
Mult Dev Wafer Test Chgs 4/Feb/2022
PCN Design/Specification
Mult DEV Label Change 12/Jun/2024
PCN Packaging
All Dev Label Chgs 2/Aug/2020Mult Devices Label 30/Sep/2018
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN9R8-30MLC,115 is a surface-mount N-channel MOSFET manufactured by Nexperia USA Inc. It is designed to handle a maximum drain-source voltage of 30V and can carry a current of up to 50A at a specified case temperature (Tc). The device is encapsulated in a compact LFPAK33 package, which offers an efficient thermal performance with a power dissipation capability of 45W at Tc. The MOSFET features a gate charge of 10.9 nC at 10V, which ensures efficient switching performance. With a gate-source voltage threshold of 4.5V and 10V, this component is suitable for various switching and amplification tasks within its specified ratings.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.