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PSMN7R5-30YLDXN-Channel 30 V 51A (Tj) 34W (Tc) Surface Mount LFPAK56, Power-SO8

1:$0.6330

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-PSMN7R-945846
ManufacturerNexperia USA Inc.
MPN #.PSMN7R5-30YLDX
Estimated Lead Time13 Weeks
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In Stock: 15290
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.6330
Ext. Price$ 0.6330
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6330$0.6330
10$0.5450$5.4510
100$0.3770$37.7190
500$0.3160$157.7810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberPSMN7R5
Continuous Drain Current (ID) @ 25°C51A (Tj)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11.3 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)655 pF @ 15 V
MfrNexperia USA Inc.
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation34W (Tc)
RDS(on) Drain-to-Source On Resistance7.5mOhm @ 15A, 10V
Package Type (Mfr.)LFPAK56, Power-SO8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 1mA
Package / CaseSC-100, SOT-669
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The PSMN7R5-30YLDX is a high-performance N-Channel MOSFET manufactured by Nexperia USA Inc. It is designed for surface mount applications and is housed in a compact LFPAK56 (Power-SO8) package. This MOSFET is capable of handling a continuous current of 51A (at junction temperature) and has a power dissipation capacity of 34W (at case temperature). It features a drain-source voltage of 30V and a threshold voltage of 2.2V at 1mA, with a gate-source voltage rating of ±20V. This part is used for efficient switching tasks due to its robust design and electrical specifications.
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